238000002425 crystallisation Methods 0.000 claims abstract description 24.Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority to DE19711922A priority Critical patent/DE19711922A1/en Priority to DE19711922.0 priority Application filed by 알.뢰머, 와커 실트로닉 게셀샤프트 퓌르, 게르트 켈러, 와커 실트로닉 게셀샤프트 퓌르 할브라이테르마테리아리엔 아게 filed Critical 알.뢰머 Publication of KR19980080133A publication Critical patent/KR19980080133A/en Application granted granted Critical Publication of KR100268712B1 publication Critical patent/KR100268712B1/en Links
#SINGLECRYSTAL DRAWING FREE#
production of fold-free and ad-layer free single-crystal graphene.
The present invention also relates to a silicon single crystal drawing method characterized in that the silicon single crystal is heat-treated. ( en Inventor 폰 암몬 빌프리드 욀크루그 한스 도른 베르게르 에리히 세기트 프란즈 Original Assignee 알.뢰머 와커 실트로닉 게셀샤프트 퓌르 게르트 켈러 와커 실트로닉 게셀샤프트 퓌르 할브라이테르마테리아리엔 아게 Priority date (The priority date is an assumption and is not a legal conclusion. The city and castle are drawn using different tile layers and you also In the child. The component surrounds a single crystal of approximately the same height as the crystallization interface, and has a property of reflecting or radiating heat radiation emitted by the single crystal.
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